Pangea® A Series - ION BEAM EQUIPMENT - Leuven Instruments -- 系统未授权

Pangea^® A Series

12" ION BEAM SHAPING SYSTEM

Ion Beam Shaping (IBS)

System Features

The Pangea^® A series is for 12" wafers, its large diameter ion source ensures great uniformity (1 σ non-uniformity < 1%)
The stage tilt angle is between -90° and +80°, so the ion beam can hit the sample surface at an angle
On-axis rotation of the wafer stage enhances process axisymmetry
The Pangea^® A series IBS chambers can be integrated into various cluster systems

Product Series

Process Data

Overview

In the Pangea® A ion beam shaping (IBS) systems, plasma generated by the ion source passes through the grid, and the cations are accelerated. Electrons from a downstream neutralizer returns the beam to a net neutral state, keeping it collimated. Particles bombard the sample, physically etching away materials through sputtering. With the ion source far away from the wafer, non-volatile etch byproducts do not get in the way of plasma ignition. Free from chemistry limitations of the typical reactive ion etch, IBS can etch any solids, including metals, alloys, compounds, dielectrics, and semiconductors. The beam voltage and beam current can be independently adjusted for better process tuning, and the wafer stage can be tilted to pattern slanted features or to clean residues from the sidewall.