LMEC-300™ - ION BEAM EQUIPMENT - Leuven Instruments -- 系统未授权

LMEC-300™

12" Special Metal Stack Etching Cluster

Reactive Ion Etch (RIE) | Ion Beam Shaping (IBS) | Plasma Enhanced Chemical Vapor Deposition (PECVD)

System Features

The Chimera^® N RIE chamber, Pangea^® A IBS chamber, and Basalt^® A PECVD chamber are all integrated into a cluster system
The LMEC-300™ system enables plasma etching, dry cleaning and in-situ passivation for materials with non-volatile etching byproducts, including magnetic tunnel junctions (MTJs), phase change alloys, metal-oxide-metal resistive stacks
Offers different solutions and processes for patterning magnetic random access memories (MRAMs), phase change random access memories (PCRAMs), resistive random access memories (ReRAMs), and magnetic sensors
Optional Chimera^® A hardmask opening (HMOP) chamber, for all-in-one solution from HMOP to functioning layer etching
Suitable for 12" wafers 。

Memory Device: MTJ Etching

Overview

The LMEC-300™ cluster integrates RIE, IBS and in-situ passivation for patterning key layers in emerging memory devices. Typical examples are MTJs of MRAMs, phase change alloys of PCRAMs, and resistive metal-oxide-metal stacks of ReRAMs. These stacks contain hard-to-process metals, with non-volatile byproducts re-depositing on the sidewalls. Combining RIE and IBS, the LMEC-300™ bypasses the re-deposition issue of RIE-only approaches, and further shrinks the feature size compared to IBS-only methods. The in-situ encapsulation module coats the devices with a protective layer after etching without vacuum break, which helps avoid device degradation due to exposure to the ambient environment. For emerging memory devices, the integrated approach of the LMEC-300™ offers the best process results on the market.