Process Data

Overview

CCP is a common plasma etching technology for manufacturing micro-/nano-structures. During the reactive ion etch, large quantities of reactive species from the plasma will react with surface atoms, forming volatile products. The exhaust was then pumped out by a vacuum system. Haasrode^® Avior^® A is a small footprint system, making it especially cost-effective. The system also provides solutions for etching a variety of materials.