Shale® C Series - THIN-FILM DEPOSITION - Leuven Instruments -- 系统未授权

Shale^® C Series

8" INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM

Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)

System Features

Deposits high density films at low temperatures (< 120 °C). The density is comparable with films prepared by LPCVD at temperatures above 750 °C
Low leakage current, comparable with atomic layer deposition (ALD) processes
Offers gap filling processes for high aspect ratio structures
8" or 6" ESC for different wafer sizes

Product Series

Process Data

Overview

The Shale® C series inductively coupled plasma chemical vapor deposition (ICP-CVD) systems form high density plasma through inductive coupling, and establishes the bias voltage through capacitive coupling. ICP-CVD film deposition process occurs at low temperatures, delivering high density, low damage, as well as great filling ability. The Shale® C series uses standard parts widely adopted by 8" IC fabs around the globe. The design is compliant with SEMI Standards.